High Al-Content AlInGaN Devices for Next Generation Electronic and Optoelectronic Applications
- Sandia National Laboratories
No abstract prepared.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 789599
- Report Number(s):
- SAND2001-3645
- Country of Publication:
- United States
- Language:
- English
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