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Title: High Al-Content AlInGaN Devices for Next Generation Electronic and Optoelectronic Applications

Technical Report ·
DOI:https://doi.org/10.2172/789599· OSTI ID:789599

No abstract prepared.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Sponsoring Organization:
US Department of Energy (US)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
789599
Report Number(s):
SAND2001-3645; TRN: US200201%%162
Resource Relation:
Other Information: PBD: 1 Dec 2001
Country of Publication:
United States
Language:
English