Selectively excited blue luminescence in heavily Mg doped p-type GaN
Conference
·
OSTI ID:789173
- LBNL Library
The emission at {approx}2.8 eV from heavily doped p-GaN, known as the blue luminescence (BL), has been studied by selective excitation using a dye laser tunable between 2.7-3.0 eV. The peak position and intensity of the BL are found to exhibit an unusual dependence on the excitation photon energy. We have explained our results with a shallow-donor and deep-acceptors pair recombination model which includes potential fluctuations induced by heavy doping. We found a ''critical energy'' of {approx}2.8 eV for the BL. Electron-hole pairs with energies above this energy are able to achieve quasi-thermal equilibrium while those with energies below 2.8 eV are strongly ''localized''.
- Research Organization:
- Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
- Sponsoring Organization:
- USDOE Director, Office of Science. Office of Basic Energy Studies. Division of Materials Sciences (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 789173
- Report Number(s):
- LBNL--48895
- Country of Publication:
- United States
- Language:
- English
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