Spatially-Resolved Ion Trajectory Measurements During Cl(2) Reactive Ion Beam Etching and Ar Ion Beam Etching
Journal Article
·
· Journal of Vacuum Science and Technology B
OSTI ID:7869
- Sandia National Laboratories
The angle of ion incidence at the etched wafer location during RIBE and IBE using Cl2, Ar and O2 ion beams has been characterized using an ion energy and angle analyzer. Effects of beam current and accelerator grid bias on beam divergence and the spatial uniformity of the spread of incident angles are measured. It is observed that increased total beam current can lead to reduced current density at the sample stage due to enhanced beam divergence at high currents. Results are related to preferred etch system design for uniform high-aspect-ratio etching across semiconductor wafers.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 7869
- Report Number(s):
- SAND99-1548J; ON: DE00007869
- Journal Information:
- Journal of Vacuum Science and Technology B, Journal Name: Journal of Vacuum Science and Technology B
- Country of Publication:
- United States
- Language:
- English
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