Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Photoluminescence-Linewidth-Derived Exciton Masses for InGaAsN Alloys

Technical Report ·
DOI:https://doi.org/10.2172/783096· OSTI ID:783096

No abstract prepared.

Research Organization:
Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
Sponsoring Organization:
US Department of Energy (US)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
783096
Report Number(s):
SAND2001-1863
Country of Publication:
United States
Language:
English

Similar Records

Photoluminescence-linewidth-derived exciton mass for InGaAsN alloys
Journal Article · Wed Jan 26 23:00:00 EST 2000 · Physical Review B · OSTI ID:751209

Near-field photoluminescence spectroscopy of localized states in InGaAsN alloys.
Conference · Mon Dec 10 23:00:00 EST 2001 · OSTI ID:789740

Excitons and Plasmas in Semiconducting Microstructures and Ternary Alloys
Technical Report · Tue Jun 27 00:00:00 EDT 2000 · OSTI ID:763159