Injection modelocked Ti-sapphire laser with discretely variable pulse repetition rates to 1.56 GHz
A gain switched diode laser was used to injection modelock a Ti-sapphire laser. The pulse repetition rate of the modelocked Ti-sapphire laser was varied by setting the diode laser pulse repetition rate equal to different multiples of the Ti-sapphire laser cavity fundamental frequency. Pulse repetition rates from 223 MHz (fundamental) to 1.56 GHz (seventh harmonic) were observed. No intracavity modelocking device was required and the Ti-sapphire laser cavity length was not changed. Maximum average output power at 854 nm was 700 mW for all pulse repetition rates when pumped with 6 W from an argon-ion laser. Pulsewidths ranged from 21 to 39 ps (FWHM). Phase noise measurements indicate that timing jitter was 2.5 ps at a pulse repetition rate of 223 MHz. Pulse-to-pulse amplitude fluctuations however, were significant and suggest that active cavity length stabilization may be required for reliable photoinjector applications.
- Research Organization:
- Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)
- Sponsoring Organization:
- USDOE Office of Energy Research (ER) (US)
- DOE Contract Number:
- AC05-84ER40150
- OSTI ID:
- 781710
- Report Number(s):
- JLAB-ACO-98-04; DOE/ER/40150-1849; TRN: AH200124%%180
- Journal Information:
- Nuclear Instruments and Methods A, Vol. 418, Issue 2-3; Other Information: PBD: 1 Dec 1998
- Country of Publication:
- United States
- Language:
- English
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