Stability of the Si-H bond on the hydrogen terminated Si(III) surface studied by sum frequency generation (SFG)
Journal Article
·
· Surface Science
OSTI ID:779751
Stability of the Si-H bonds on the hydrogen terminated Si(III) surface has been investigated by sum frequency generation (SFG) spectroscopy in air at room temperature. The SFG observation showed that the Si(III)surface is terminated by a monolayer of monohydride (Si-H) after etching in a concentrated ammonium fluoride (NH4F)solution. The number of Si-H bonds decreased with laser irradiation time and the abstraction rate of hydrogen atoms on Si increased with the increase of input energy of
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Director, Office of Science. Office of Basic Energy Studies. Division of Materials Sciences (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 779751
- Report Number(s):
- LBNL-46790; SUSCAS; R&D Project: 506001; TRN: AH200119%%86
- Journal Information:
- Surface Science, Vol. 476, Issue 1-2; Other Information: Journal Publication Date: Mar. 20, 2001; PBD: 28 Aug 2000; ISSN 0039-6028
- Country of Publication:
- United States
- Language:
- English
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