Generation of THz Radiation by Excitation of InAs with a Free Electron Laser
Conference
·
OSTI ID:775302
Terahertz (THz) radiation is generated by exciting an un-doped InAs wafer with a femtosecond free-electron laser (FEL) at the Thomas Jefferson National Accelerator Facility. A microwatt level of THz radiation is detected from the unbiased InAs emitter when it is excited with the femtosecond FEL pulses operated at a wavelength of 1.06 {mu}-m and 10 W average power.
- Research Organization:
- Thomas Jefferson National Accelerator Facility, Newport News, VA (US)
- Sponsoring Organization:
- USDOE Office of Energy Research (ER) (US)
- DOE Contract Number:
- AC05-84ER40150
- OSTI ID:
- 775302
- Report Number(s):
- JLAB-ACT-01-01; DOE/ER/40150-1813
- Country of Publication:
- United States
- Language:
- English
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