Near-band-edge Photoluminescence Emission in Al{sub x}Ga{sub 1-x}N under High Pressure
Journal Article
·
· Applied Physics Letters
OSTI ID:773676
No abstract prepared.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Director, Office of Energy Research; Hewlett-Packard Laboratories - CRADA (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 773676
- Report Number(s):
- LBNL-41184; APPLAB; TRN: AH200106%%53
- Journal Information:
- Applied Physics Letters, Vol. 72, Issue 18; Other Information: PBD: 15 Dec 1997; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Near-band-edge photoluminescence emission in Al{sub x}Ga{sub 1{minus}x}N under high pressure
Dependence of the fundamental band gap of Al{sub x}Ga{sub 1-x}N on alloy composition and pressure
Erratum: “High-resolution X-ray diffraction analysis of Al{sub x}Ga{sub 1−x}N/In{sub x}Ga{sub 1−x}N/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations” [J. Appl. Phys. 115, 174507 (2014)]
Journal Article
·
Fri May 01 00:00:00 EDT 1998
· Applied Physics Letters
·
OSTI ID:773676
+7 more
Dependence of the fundamental band gap of Al{sub x}Ga{sub 1-x}N on alloy composition and pressure
Journal Article
·
Wed Dec 16 00:00:00 EST 1998
· Journal of Applied Physics
·
OSTI ID:773676
+5 more
Erratum: “High-resolution X-ray diffraction analysis of Al{sub x}Ga{sub 1−x}N/In{sub x}Ga{sub 1−x}N/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations” [J. Appl. Phys. 115, 174507 (2014)]
Journal Article
·
Wed Jan 28 00:00:00 EST 2015
· Journal of Applied Physics
·
OSTI ID:773676
+3 more