Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

In-Situ STM Studies of Strain Stabilized Thin Film Dislocation Networks Under Applied Stress

Conference ·
OSTI ID:763911
; ; ; ;

No abstract prepared.

Research Organization:
Sandia National Laboratories, Albuquerque, NM (US); Sandia National Laboratories, Livermore, CA (US)
Sponsoring Organization:
US Department of Energy (US)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
763911
Report Number(s):
SAND2000-8849C
Country of Publication:
United States
Language:
English

Similar Records

In situ TEM straining of thin films & nanomaterials.
Conference · Wed Sep 01 00:00:00 EDT 2010 · OSTI ID:1026989
Structure and Internal Stresses of Cellular Networks of Dislocations
Conference · Mon Jun 19 00:00:00 EDT 2000 · OSTI ID:766625
STM of growth kinetics and strain-related challenges to smooth Si thin film epitaxy.
Conference · Tue Nov 01 00:00:00 EDT 2016 · OSTI ID:1408295

Related Subjects

36 MATERIALS SCIENCE
DISLOCATIONS
MATERIALS
MICROSCOPY
STRAINS
THIN FILMS