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Title: AlGaAs/InGaAlP tunnel junctions for multijunction solar cells

Abstract

Optimization of GaInP{sub 2}/GaAs dual and GaInP{sub 2}/GaAs/Ge triple junction cells, and development of future generation monolithic multi-junction cells will involve the development of suitable high bandgap tunnel junctions. There are three criteria that a tunnel junction must meet. First, the resistance of the junction must be kept low enough so that the series resistance of the overall device is not increased. For AMO, 1 sun operation, the tunnel junction resistance should be below 5 x 10{sup {minus}2} {Omega}-cm. Secondly, the peak current density for the tunnel junction must also be larger than the J{sub sc} of the cell so that the tunnel junction I-V curve does not have a deleterious effect on the I-V curve of the multi-junction device. Finally, the tunnel junction must be optically transparent, i.e., there must be a minimum of optical absorption of photons that will be collected by the underlying subcells. The paper reports the investigation of four high bandgap tunnel junctions grown by metal-organic chemical vapor deposition.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
756113
Report Number(s):
SAND2000-1234C
TRN: AH200021%%131
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: 28th IEEE Photovoltaic Specialists Conference, Anchorage, AK (US), 09/19/2000--09/22/2000; Other Information: PBD: 16 May 2000
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; GALLIUM ARSENIDE SOLAR CELLS; GALLIUM PHOSPHIDE SOLAR CELLS; INDIUM PHOSPHIDE SOLAR CELLS; GERMANIUM; SEMICONDUCTOR JUNCTIONS; ENERGY GAP

Citation Formats

SHARPS,P.R., LI,N.Y., HILLS,J.S., HOU,H., CHANG,PING-CHIH, and BACA,ALBERT G. AlGaAs/InGaAlP tunnel junctions for multijunction solar cells. United States: N. p., 2000. Web.
SHARPS,P.R., LI,N.Y., HILLS,J.S., HOU,H., CHANG,PING-CHIH, & BACA,ALBERT G. AlGaAs/InGaAlP tunnel junctions for multijunction solar cells. United States.
SHARPS,P.R., LI,N.Y., HILLS,J.S., HOU,H., CHANG,PING-CHIH, and BACA,ALBERT G. Tue . "AlGaAs/InGaAlP tunnel junctions for multijunction solar cells". United States. https://www.osti.gov/servlets/purl/756113.
@article{osti_756113,
title = {AlGaAs/InGaAlP tunnel junctions for multijunction solar cells},
author = {SHARPS,P.R. and LI,N.Y. and HILLS,J.S. and HOU,H. and CHANG,PING-CHIH and BACA,ALBERT G.},
abstractNote = {Optimization of GaInP{sub 2}/GaAs dual and GaInP{sub 2}/GaAs/Ge triple junction cells, and development of future generation monolithic multi-junction cells will involve the development of suitable high bandgap tunnel junctions. There are three criteria that a tunnel junction must meet. First, the resistance of the junction must be kept low enough so that the series resistance of the overall device is not increased. For AMO, 1 sun operation, the tunnel junction resistance should be below 5 x 10{sup {minus}2} {Omega}-cm. Secondly, the peak current density for the tunnel junction must also be larger than the J{sub sc} of the cell so that the tunnel junction I-V curve does not have a deleterious effect on the I-V curve of the multi-junction device. Finally, the tunnel junction must be optically transparent, i.e., there must be a minimum of optical absorption of photons that will be collected by the underlying subcells. The paper reports the investigation of four high bandgap tunnel junctions grown by metal-organic chemical vapor deposition.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {5}
}

Conference:
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