Spatial Mapping of Cadmium Zinc Telluride Materials Properties and Electrical Response to Improve Device yield and Performance

Conference · Mon Jan 26 00:00:00 EST 1998

OSTI ID:755950

Van Scyoc, J M; Brunet, B A; Yoon, H; Gilbert, T S; Hilton, N R; Lund, J C; James, R B

Cadmium zinc telluride has experienced tremendous growth in its application to various radiation sensing problems over the last five years. However, there are still issues with yield, particularly of the large volume devices needed for imaging and sensitivity-critical applications. Inhomogeneities of various types and on various length scales currently prevent the fabrication of large devices of high spectral performance. This paper discusses the development of a set of characterization tools for quantifying these inhomogeneities, in order to develop improvement strategies to achieve the desired cadmium zinc telluride crystals for detector fabrication.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 755950
• Report Number(s): SAND2000-8613C; TRN: US0005263
• Resource Relation: Conference: Conference on Room Temperature Semi Conductor Detectors for Remote Portable and In-Situ Radiation Measurement Systems, Jerusalem (IL), 01/26/1998--01/29/1998; Other Information: PBD: 26 Jan 1998
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CADMIUM TELLURIDES
FABRICATION
PERFORMANCE
ZINC TELLURIDES
ELECTRICAL PROPERTIES
RADIATION DETECTORS