Evaluation of CZT crystals from the former Soviet Union

Conference · Mon Jan 26 04:00:00 EST 1998

OSTI ID:755948

Hermon, H; Schieber, M; James, R B; Antolak, A J; Morse, D H; Brunett, B; Hackett, C; Tarver, E; Komar, V; Goorsky, M S; Yoon, H; Kolesnikov, N N; Toney, J; Schlesinger, T E

Vertical high pressure Bridgman (VHPB) Cd{sub 1{minus}x}Zn{sub x}Te (0.04 < x < 0.24) detector crystals grown in the Ukraine and Russia have been evaluated and compared to US-grown materials. Various analytical techniques were used to study the materials for trace impurities, precipitates, crystallinity, and electrical transport properties. Relatively high concentrations of carbon and trace impurities such as Se, Nd and Si have been detected in the crystals. In most cases, the crystals showed lower resistivity than US-grown CZT. However, recent crystals grown in Russia exhibited better detector performance than those grown in prior years, and good response to an {sup 241}Am radioactive source was found. Electron lifetimes below 1 {micro}s were measured in crystals having significant numbers of micro-defects, compared to lifetimes of 5--15 {micro}s found in spectrometer grade materials produced in the US. Furthermore, the zinc composition along the growth axis showed better homogeneity in comparison with the US material.

• Research Organization: Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 755948
• Report Number(s): SAND2000-8609C
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
AMBIENT TEMPERATURE
BRIDGMAN METHOD
CADMIUM TELLURIDES
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
GAMMA SPECTROMETERS
MICROSTRUCTURE
SEMICONDUCTOR DETECTORS
ZINC TELLURIDES