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Title: Individual solubilities and cosolubilities of Zn, Cd, and Te in InAs

Journal Article · · Inorg. Mater. (USSR) (Engl. Transl.); (United States)
OSTI ID:7361625

Microhardness and microstructural methods were used to determine the solubilities of Zn, Cd, and Te in InAs by simple doping. Local micro x-ray-spectral analysis was also used to estimate quantitatively the dopant content of the InAs-based solid solution both for one-phase alloys (with compositions in the corresponding regions of homogeneity) and two-phase alloys (beyond the saturation limit at each temperature). The results are summarized as curves of the solid-solution concentration ..cap alpha.. vs alloy composition N/sub ..cap alpha../ approximately f(N/sub Zn, Cd, Te) in comparison with the corresponding curves of the concentration dependence of the microhardness of the solid-solution crystals. Values of the individual solubilities and cosolubilities of Zn, Cd, and Te in InAs at different temperatures are summarized as isotherms of the cosolubilities of donor and acceptor dopants. From an analysis of the overall character of the solubility isotherms in the systems InAs -- Zn(Cd) -- Te it follows that the solubility of Te in the presence of added Zn and Cd (and at all temperatures) increases in comparison with the binary systems InAs -- Te(Zn, Cd). The increase in solubility with simultaneous doping is probably due to a reaction between the dopants. In the case in question, the increase in solubility is attributable to formation of molecular complexes of type ZnTe . CdTe within the corresponding semiconductor-based regions of homogeneity. The observed character of the solubility isotherms in the cross sections InAs -- Zn(Cd)Te is qualitatively attributable to the fact that as regards the type of chemical bond and the lattice type and size, compounds of the group A/sup II/B/sup VI/(ZnTe and CdTe) are essentially more similar to the solvent, and can therefore dissolve in it to a greater extent than can their component elements -- Zn, Cd, and Te.

Research Organization:
Inst. of Electronic Technique, Moscow
OSTI ID:
7361625
Journal Information:
Inorg. Mater. (USSR) (Engl. Transl.); (United States), Vol. 11:7; Other Information: Translated from Izv. Akad. Nauk SSSR, Neorg. Mater.; 11: No. 7, 1181-1183(Jul 1975)
Country of Publication:
United States
Language:
English