Sizing single crystal sapphire

Technical Report · Sun Feb 29 23:00:00 EST 1976

DOI:https://doi.org/10.2172/7357417· OSTI ID:7357417

Bushmire, D W

Although there are several significant advantages to using single crystal sapphire as substrate material for hybrid microcircuits, the sizing of this material can be far more troublesome than the sizing of alternate material, such as polycrystal alumina. The work done in developing a satisfactory method of sizing single crystal sapphire is described. The results of sizing using grinding wheels, wire saws, and laser scribers are given. It was concluded that laser scribing is a viable method of sizing if the sapphire is grown parallel to the r plane. This takes advantage of the easy crystal cleavage planes and reduces the risk of edge chipping and nonperpendicular breaking.

• Research Organization: Sandia Labs., Albuquerque, N.Mex. (USA)
• DOE Contract Number: AT(29-1)-789
• OSTI ID: 7357417
• Report Number(s): SAND-75-0614
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
CHALCOGENIDES
CORUNDUM
CRYSTALS
ELECTRONIC CIRCUITS
FABRICATION
GRINDING MACHINES
LASERS
MACHINE TOOLS
MACHINING
MATERIALS WORKING
MINERALS
MONOCRYSTALS
OXIDES
OXYGEN COMPOUNDS
SAPPHIRE
SUBSTRATES
WIRES