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U.S. Department of Energy
Office of Scientific and Technical Information

Research in materials science. Final technical report, 1 Jun 1973--31 May 1975

Technical Report ·
OSTI ID:7355236
Topics covered include: Minilaser development - material design, Er(3/sup +/) sensitized Ho(3/sup +/) lasers, Yb(3/sup +/) sensitized Ho(3/sup +/) lasers, LED pumping considerations; Diode pumps - diode pumps program objectives and structure, diode fabrication and evaluation, silicon doped gallium arsenide, gallium arsenide antimonide; KTN (KTa(1-x)Nb(x)O/sub 3/) thin films - growth of single crystal films, film characterization, device fabrication and evaluation, growth of KTN by chemical vapor deposition; Laser output coupling - Synchronous coupling; Grating facility; Preparation of feed materials for crystal growth - clean room, chemical techniques, chemicals and reagents: sources and purification, chemicals: sources of material to be processed into crystal growth feed, synthesis of crystal growth feed materials, fluoride crystal growth; Publications and talks.
Research Organization:
Massachusetts Inst. of Tech., Cambridge (USA). Center for Materials Science and Engineering
OSTI ID:
7355236
Report Number(s):
AD-A-014996
Country of Publication:
United States
Language:
English