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Experiments in high voltage electron microscopy. Progress report, October 31, 1975--August 1976

Technical Report ·
DOI:https://doi.org/10.2172/7347583· OSTI ID:7347583
High voltage electron microscopy (HVEM) is being used to study the effects of irradiation on a variety of materials. The vacancies and interstitials produced by displacement can agglomerate to form dislocation loops and voids, annihilate at sinks, or enhance various diffusion processes such as precipitation and recrystallization. Threshold displacement energies, E/sub d/, have been determined for a number of fcc, bcc, and hcp metals. Directions for minimum E/sub d/ have been correlated with the crystal structure and the magnitude of E/sub d/ has been related to the sublimation energy. The effects of electron irradiation on precipitation in Al--Cu, Al--Si and Ni--Al alloys have been investigated. Precipitation respectively of theta', Si and ..gamma..' is enhanced and growth rates are being related quantitatively to theories of radiation-enhanced diffusion. Results on radiation damage in oxides (quartz, alumina, and magnesia) have also been obtained. Displacement damage gives rise to dislocation loop nucleation and growth in all cases, including multi-layer loops in Al/sub 2/O/sub 3/. In SiO/sub 2/, ionization damage also occurs, which destroys the crystallinity. Threshold displacement and temperature effects have also been investigated.
Research Organization:
Case Western Reserve Univ., Cleveland, Ohio (USA). Dept. of Metallurgy and Materials Science
Sponsoring Organization:
US Energy Research and Development Administration (ERDA)
OSTI ID:
7347583
Report Number(s):
COO-2119-17
Country of Publication:
United States
Language:
English