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Piezoelectrically-induced switching of 90 degree domains in tetragonal BaTiO sub 3 and PbTiO sub 3 investigated by micro-Raman spectroscopy

Journal Article · · Journal of Applied Physics; (United States)
DOI:https://doi.org/10.1063/1.350792· OSTI ID:7306379
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  1. Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
Domain switching of 90{degree} ferroelectric domains in tetragonal BaTiO{sub 3} and PbTiO{sub 3} is induced by the application of stress along specific crystallographic axes. For BaTiO{sub 3}, single-domain crystals are obtained from twinned specimens by the application of {similar to}1.1 MPa of stress parallel to the {ital a} axis and twin boundaries are induced by application of {similar to}0.22 MPa of stress parallel to the {ital c} axis. Similar piezoelectrically-induced domain switching was observed in PbTiO{sub 3} at elevated temperature. We observed the rotation of the crystallographic axes associated with domain switching via micro-Raman spectroscopy. These results were consistent with optical microscope images of the domain switching which demonstrates the usefulness of micro-Raman spectroscopy for the study of ferroelectric domain structures. A phenomenological treatment of domain switching in a piezoelectrically-coupled system is described.
DOE Contract Number:
W-31109-ENG-38
OSTI ID:
7306379
Journal Information:
Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 71:9; ISSN 0021-8979; ISSN JAPIA
Country of Publication:
United States
Language:
English