Optical spectroscopy of (001) GaAs and AlAs under molecular-beam epitaxy growth conditions

Conference · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

OSTI ID:7306039

Wassermeier, M; Petroff, P M ^[1]; Kamiya, I ^[2]; Aspnes, D E; Florez, L T; Harbison, J P ^[3]

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1. Univ. of California, Santa Barbara (United States)
2. Univ. of Illinois, Urbana (United States)
3. Bellcore, Red Bank, NJ (United States)

This paper reports on reflectance-difference (RD) studies performed on variously reconstructed (001) GaAs and AlAs surfaces. The spectra of the (2 {times} 4) and (4 {times} 2) reconstructions on (001) GaAs show prominent features due to electronic transitions between lone-pair orbitals and dimer states, as previously identified by theoretical calculations. The spectra of the c(4 {times} 4) reconstructions on (001) GaAs and AlAs show similar features that the authors also interpret in terms of surface dimer excitations. These dimer features provide a capability of obtaining real-time, in situ information of dynamics on polar surfaces.

• OSTI ID: 7306039
• Report Number(s): CONF-910115--
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 9:4; ISSN 0734-211X; ISSN JVTBD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DIMERS
ELECTRONIC STRUCTURE
EMISSION SPECTROSCOPY
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
MEASURING INSTRUMENTS
MOLECULAR BEAM EPITAXY
OPTICAL SPECTROMETERS
PNICTIDES
SPECTROMETERS
SPECTROSCOPY