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Photoelectrochemistry of semiconductor ZnO particulate films

Journal Article · · Journal of the Electrochemical Society; (United States)
DOI:https://doi.org/10.1149/1.2069468· OSTI ID:7305750
 [1];  [2]
  1. Centre de Recherche en Photobiophysique, Univ. du Quebec a Trois Rivieres, Trois-Rivieres, Quebec, G9A 5H7 (CA)
  2. Notre Dame Univ., IN (United States). Radiation Lab.
This paper reports on thin films of ZnO semiconductor that have been prepared on electrode surfaces by coating them with quantized ZnO colloids. The photoelectrochemical properties of semiconductor particulate films have been evaluated with both steady-state and laser pulse excitations. The ZnO film behaves like an n-type semiconductor with a flatband potential of {minus}0.6 V vs. SCE. The incident-photon conversion efficiency at 320 nm is 15%. The generation of photovoltage at these electrodes has been time-resolved with coulostatic laser-flash-photolysis experiments.
OSTI ID:
7305750
Journal Information:
Journal of the Electrochemical Society; (United States), Journal Name: Journal of the Electrochemical Society; (United States) Vol. 139:6; ISSN 0013-4651; ISSN JESOA
Country of Publication:
United States
Language:
English