Channeling analysis of stacking defects in epitaxial Si layers
The channeling effect technique has been applied to investigate dechanneling by stacking defects in heteroepitaxially grown silicon. Ion backscattering was performed on 0.9 ..mu..m Si layers grown on sapphire as a function of beam energy (1.1 to 2.5 MeV He/sup +/), projectile ion (He/sup +/, D/sup +/) and crystal direction ((100), (111), (112), (113)). A model based on the new interior surfaces presented by such stacking defects is used to calculate the dechanneling cross section, and the disorder profiles are obtained from the experimental dechanneled fractions in terms of displaced rows per unit volume. Direct backscattering of channeled particles from the defects is neglected since the dechanneling cross section per row is about one order of magnitude larger than that per displaced atom. The resulting defect depth distributions are independent of beam energy and projectile ion, and give improved quantitative agreement with previous studies. The application of channeling to stacking-defect measurements requires a minimum density of approximately 10/sup 15/ displaced rows/cm/sup 2/.
- Research Organization:
- Sandia Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- EY-76-C-04-0789
- OSTI ID:
- 7304058
- Report Number(s):
- SAND-77-0478C; CONF-770642-1
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360102* -- Metals & Alloys-- Structure & Phase Studies
640301 -- Atomic
Molecular & Chemical Physics-- Beams & their Reactions
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
BACKSCATTERING
CHANNELING
CHARGED PARTICLES
CROSS SECTIONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEUTERIUM IONS
ELEMENTS
ENERGY RANGE
HELIUM IONS
ION CHANNELING
IONS
MEV RANGE
MEV RANGE 01-10
SCATTERING
SEMIMETALS
SILICON
STACKING FAULTS