Reflection high-energy electron-diffraction analysis of the Si(111)-(7[times]7) reconstruction
- Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
- Department of Physics, Faculty of Science, University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113 (Japan)
Most of the techniques used to determine the structure of reconstructed surfaces are relatively insensitive to displacements perpendicular to the surface, especially those of subsurface atoms. Reflection high-energy electron diffraction (RHEED) is sensitive to these displacements. We have performed a dynamical simulation of RHEED intensities and show that for the Si(111)-7[times]7 reconstruction, the dimer-adatom stacking-fault model optimized by [ital ab] [ital initio] parallel computation has given more accurate atomic positions than previous determinations by other approaches. This indicates that the relative intensities of reflections in a RHEED pattern contain important, sensitive surface structural information.
- DOE Contract Number:
- FG02-91ER45439
- OSTI ID:
- 7303026
- Journal Information:
- Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 49:24; ISSN PRBMDO; ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
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