Heat exchanger-ingot casting/slicing process. Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project. Seventh quarterly progress report, March 22, 1977--June 30, 1977
Efforts in crystal casting during the last quarter were directed towards obtaining crack-free, single crystal boules. A crack-free 15 cm diameter silicon ingot has been cast using thin-wall, clear silica crucibles. A number of crack-free ingots have been solidified on smaller scales using sintered silica liners and coatings. Single crystal growth has been achieved all the way to the top of the seed as well as laterally to the crucible walls. Sixty-four wafers per inch (5-7mils, 0.125-0.175mm thick) were sliced using fixed diamond abrasive particles. The diamond impregnated wire fails because of diamond pull-out, thereby having shorter life as compared to the diamond plated wire. Impregnation of diamond can be carried out to high concentrations in house. This wire after plating is expected to yield a suitable blade for silicon slicing. A cost analysis has shown that the cost of expendable materials, diamond and wire, are negligible for slicing silicon with fixed diamond abrasive.
- Research Organization:
- Crystal Systems, Inc., Salem, Mass. (USA)
- DOE Contract Number:
- NAS-7-100-954373
- OSTI ID:
- 7296469
- Report Number(s):
- ERDA/JPL/954373-77/2
- Country of Publication:
- United States
- Language:
- English
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Heat exchanger-ingot casting/slicing process. Silicon sheet growth development for the Large Area Silicon Sheet Task of the Low Cost Silicon Solar Array Project. Final report, Phase I, November 20, 1975--November 20, 1977
Heat exchanger method, ingot casting; fixed abrasive method, multi-wire slicing: Phase II. Silicon sheet growth development for the Large-Area Silicon Sheet Task of the Low-Cost Silicon Solar Array Project. Quarterly progress report No. 2, January 1, 1978--March 31, 1978