New approach to the preparation of ultrathin silicon dioxide films at low temperatures

Journal Article · Mon Aug 17 00:00:00 EDT 1992 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.107795· OSTI ID:7294486

Xu, X; Goodman, D W ^[1]

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1. Department of Chemistry, Texas A M University, College Station, Texas 77843 (United States)

Ultrathin silicon dioxide films have been prepared on a Mo(110) substrate at a relatively low temperature ({lt}100 {degree}C) by evaporating silicon in an oxygen background. The SiO{sub 2} films were characterized by Auger electron, electron energy loss, and IR reflection absorption spectroscopies. At low substrate temperatures, the SiO{sub 2} films are amorphous, consisting of networks of (SiO{sub 4}) tetrahedra units with limited size. Upon post-annealing, the small networks of (SiO{sub 4}) fuse together, and become more ordered. In turn, the electronic properties of the SiO{sub 2} films approach those of vitreous silica.

• OSTI ID: 7294486
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 61:7; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
AMORPHOUS STATE
ANNEALING
AUGER ELECTRON SPECTROSCOPY
BEAMS
CHALCOGENIDES
CHEMICAL REACTIONS
DEPOSITION
ELECTRON BEAMS
ELECTRON SPECTROSCOPY
EVAPORATION
FILMS
GROWTH
HEAT TREATMENTS
INFRARED SPECTRA
LEPTON BEAMS
OXIDATION
OXIDES
OXYGEN COMPOUNDS
PARTICLE BEAMS
PHASE TRANSFORMATIONS
SILICON COMPOUNDS
SILICON OXIDES
SPECTRA
SPECTROSCOPY
THIN FILMS