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Title: Strain relaxation by domain formation in epitaxial ferroelectric thin films

Journal Article · · Physical Review Letters; (United States)
;  [1];  [2]; ; ;  [3]
  1. School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States)
  2. Bell Communications Research, Red Bank, New Jersey 07701-7020 (United States)
  3. Solid State Division, Oak Ridge National Laboratory Oak Ridge, Tennessee 37831 (United States)

The origin of strain-induced, modulated domain structures observed in epitaxial ferroelectric lead titanate thin films is discussed using a phenomenological total-energy calculation. Linear elasticity is used to account for the substrate contribution while a free-energy functional of the Landau-Ginzburg-Devonshire type is used to calculate the domain-wall and the polarization contributions from the film. Good agreement between the predictions of this model and the experimental results is found for thickness-dependent properties such as the relative domain population and spontaneous strain.

DOE Contract Number:
AC05-84OR21400
OSTI ID:
7294070
Journal Information:
Physical Review Letters; (United States), Vol. 68:25; ISSN 0031-9007
Country of Publication:
United States
Language:
English