skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Solar silicon via improved and expanded metallurgical silicon technology. Quarterly report No. 4

Technical Report ·
DOI:https://doi.org/10.2172/7293316· OSTI ID:7293316

The goal of this program is to produce solar-cell-grade silicon at 3000 Mt/y for less than $10/kg by 1986. The approach is to improve the quality of the 200,000-Mt/y process for producing $1/kg, 98-percent pure metallurgical silicon. A completed preliminary survey of silica sources indicates that sufficient quantities of high-purity quartz are available in the U.S. and Canada to meet LSSA goals. Supply can easily meet demand for this little-sought commodity. Charcoal, as a reductant for silica, can be purified to a sufficient level by high-temperature fluorocarbon treatment and vacuum processing. High-temperature treatment causes partial graphitization which can lead to difficulty in smelting. Smelting of Arkansas quartz and purified charcoal produced kilogram quantities of silicon having impurity levels generally much lower than in MG-Si. Half of the goal was met of increasing the boron resistivity from 0.03 ohm-cm in metallurgical silicon to 0.3 ohm-cm in solar silicon. A cost analysis of the solidification process indicates $3.50-7.25/kg Si for the Czochralski-type process and $1.50 to 4.25/kg Si for the Bridgman-type technique.

Research Organization:
Dow Corning Corp., Hemlock, Mich. (USA). Solid-State Research and Development Lab.
DOE Contract Number:
NAS-7-100-954559
OSTI ID:
7293316
Report Number(s):
ERDA/JPL/954559-77/2
Country of Publication:
United States
Language:
English