Temperature dependence of the 4[ital f] occupation of Ce[sub 3]Bi[sub 4]Pt[sub 3]
Journal Article
·
· Physical Review, B: Condensed Matter; (United States)
- Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
We have determined the 4[ital f] occupation number [ital n][sub [ital f]] of the Kondo insulator Ce[sub 3]Bi[sub 4]Pt[sub 3] over the temperature range 10--300 K using x-ray-absorption measurements near the Ce [ital L][sub III] edge. The compound is weakly mixed valent: [ital n][sub [ital f]] is approximately 0.9 at 10 K and varies slowly with temperature in a manner similar to that observed in metallic mixed-valent rare-earth compounds.
- OSTI ID:
- 7284253
- Journal Information:
- Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 49:20; ISSN 0163-1829; ISSN PRBMDO
- Country of Publication:
- United States
- Language:
- English
Similar Records
Evidence for localized 4[ital f] states in [alpha]-Ce
Kondo coupling induced charge gap in Ce[sub 3]Bi[sub 4]Pt[sub 3]
Magnetostriction and thermal expansion of the Kondo semiconductor Ce{sub 3}Bi{sub 4}Pt{sub 3}
Journal Article
·
Sun Oct 31 23:00:00 EST 1993
· Physical Review, B: Condensed Matter; (United States)
·
OSTI ID:6084415
Kondo coupling induced charge gap in Ce[sub 3]Bi[sub 4]Pt[sub 3]
Journal Article
·
Sun Jan 23 23:00:00 EST 1994
· Physical Review Letters; (United States)
·
OSTI ID:5365883
Magnetostriction and thermal expansion of the Kondo semiconductor Ce{sub 3}Bi{sub 4}Pt{sub 3}
Conference
·
Mon May 01 00:00:00 EDT 1995
·
OSTI ID:67763