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A new semiconducting ferroelectric [Ga[sub 1[minus]x]Ge[sub x]Te]

Journal Article · · Materials Research Bulletin; (United States)
;  [1]
  1. I.I.T., Kharagpur (India). Materials Science Centre
The dielectric properties of a new semiconducting alloy Ga[sub 1[minus]x]Ge[sub x]Te (x = 0.10--0.49) have been studied and found to show ferroelectric behavior. The crystal structure was found to be GaTe-like (monoclinic) up to x = 0.10 and changed to GeTe-like (rhombohedral) from x = 0.25. The dielectric constants ([var epsilon][sub [parallel]c] and [var epsilon][sub [perpendicular]c] ) at 300 K increased monotonically with x reaching 255 and 360 respectively at x = 0.49. The Curie temperature [Tc] decreased from 497 C for x = 0.10 to 428 C for x = 0.49, the transition being shown to be of second order. Ferroelectric behavior was confirmed by well-defined hysteresis curves, the spontaneous polarization (P[sub s]) being 5.75 [mu]C/cm[sup 2] and the coercive field (E[sub c]) 85 kV/cm at 300 K for x = 0.35. The band-gap of the alloy decreased from 1.66 eV for x = 0 to 0.62 eV for x = 0.49 indicating its semiconducting nature, the highest resistivity of 10[sup 5] [Omega]-cm being obtained in the layer plane for x = 0.10.
OSTI ID:
7283876
Journal Information:
Materials Research Bulletin; (United States), Journal Name: Materials Research Bulletin; (United States) Vol. 29:2; ISSN MRBUAC; ISSN 0025-5408
Country of Publication:
United States
Language:
English