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Hall effect in rare-earth--transition-metal amorphous alloy films

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.323098· OSTI ID:7283259

The Hall effect in amorphous RE-TM (RE=Gd, Tb, Dy; TM=Fe, Ni) films with a perpendicular magnetization easy axis was measured. It was found that amorphous RE-Fe films exhibited a remarkable extraordinary Hall effect as observed previously for Gd-Co sputtered films, and that the observed Hall effect behavior depended much less on the RE element. It was also found that the Hall voltage in Gd-Ni films was two orders of magnitude smaller than that in RE-Fe films. These observations suggest that the TM plays a dominant role in the anomalous Hall voltage in RE-TM alloy systems. (AIP)

Research Organization:
KDD Research and Development Laboratory, Nakameguro, Meguro-Ku, Tokyo, Japan
OSTI ID:
7283259
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 47:7; ISSN JAPIA
Country of Publication:
United States
Language:
English

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