Photoemission study of the growth, desorption, Schottky-barrier formation, and atomic structure of Pb on Si(111)

Journal Article · Sat Feb 15 00:00:00 EST 1992 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.45.3400· OSTI ID:7282429

Carlisle, J A; Miller, T; Chiang, T ^[1]

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1. Department of Physics, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801 (United States) Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 South Goodwin Avenue, Urbana, Illinois 61801 (United States)

We have utilized high-resolution synchrotron-radiation photoemission spectroscopy and high-energy electron diffraction to study the various reconstructed surfaces of Pb-covered Si(111). The Si 2{ital p} and Pb 5{ital d} core levels and valence bands are analyzed as a function of Pb coverage and annealing temperature. We confirm the room-temperature (RT) Stranski-Krastanov growth mode with the two-dimensional adlayer completed at {similar to}1.3 monolayers. The formation of the Schottky barrier has been studied. We measure {ital n}-type barrier heights of 0.89 and 1.09 eV for the RT epitaxial phase and the ({radical}3 {times} {radical}3 ){ital R}30{degree} incommensurate phase, respectively. Possible mechanisms that may be responsible for the disagreement between barrier heights as measured by core-level photoemission and electrical techniques are discussed. We also report on the observation of surface-shifted core levels and surface states in the valence band for the ({radical}3 {times} {radical}3 ){ital R}30{degree} phases obtained by annealing to higher temperatures in the desorption regime. These results are used for an investigation of the structural models for these surface phases.

• DOE Contract Number: FG02-91ER45439
• OSTI ID: 7282429
• Journal Information: Physical Review, B: Condensed Matter; (United States), Vol. 45:7; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
LEAD
LAYERS
SILICON
SURFACE PROPERTIES
DESORPTION
ELECTRON DIFFRACTION
ELECTRONIC STRUCTURE
MONOCRYSTALS
PHOTOEMISSION
SCHOTTKY BARRIER DIODES
COHERENT SCATTERING
CRYSTALS
DIFFRACTION
ELEMENTS
EMISSION
METALS
SCATTERING
SECONDARY EMISSION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
SORPTION
360602* - Other Materials- Structure & Phase Studies