Novel p-JFET embedded in silicon radiation detectors that avoids preamplifier feedback resistor

Journal Article · Mon May 01 04:00:00 EDT 1995 · IEEE Electron Device Letters

DOI:https://doi.org/10.1109/55.382242· OSTI ID:72809

Sampietro, M; Fasoli, L ^[1]; Rehak, P ^[2]; Struder, L ^[3]

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1. Politecnico di Milano (Italy). Dipt. di Elettronica e Informazione
2. Brookhaven National Lab., Upton, NY (United States)
3. Max Planck Inst. fuer Physik und Extraterrestrische Physik, Munchen (Germany)

The paper describes the design and the performance of an original p-channel JFET embedded in the collecting anode of a silicon radiation detector. The choice of a p-channel transistor, whose gate-to-channel junction is forward biased by the leakage current from the detector, avoids the preamplifier feedback resistor and performs a continuous dc reset of the collected charge. The reported design, fully compatible with the detector fabrication, makes the operation of the detector extremely simple, ensures the best charge collection capability and leads to improved charge resolution. The first detector produced with this type of transistor has a resolution of 27 electrons rms in the measurement of the collected charge at room temperature for a pixel active area of about 0.1 mm{sup 2}, and of 22 electrons rms at T = 210 K.

• OSTI ID: 72809
• Journal Information: IEEE Electron Device Letters, Journal Name: IEEE Electron Device Letters Journal Issue: 5 Vol. 16; ISSN 0741-3106; ISSN EDLEDZ
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
DESIGN
FIELD EFFECT TRANSISTORS
P-TYPE CONDUCTORS
PERFORMANCE
SI SEMICONDUCTOR DETECTORS