Electron beam effects on (CH[sub 2])[sub 17] self-assembled monolayer SiO[sub 2]/Si specimens
- Pacific Northwest Laboratory, Richland, Washington 99352 (United States)
This paper examines the damage created by an electron beam on layered specimens consisting of a (CH[sub 2])[sub 17] self-assembled monolayer (SAM) deposited on an oxidized Si wafer. Beam effects on both the SAM and substrate were observed. X-ray photoelectron spectroscopy (XPS) measurements indicate that less than 20% of the carbon from the film is lost during the beam damage, ion analysis shows hydrogen emission from the films, and residual gas analysis suggest loss of some CH[sub [ital x]] ([ital x]=2--4) molecules. Consistent with the conversion of some (CH)[sub [ital n]] chains to graphite,'' the C 1[ital s] photopeak is broadened by the electron beam. In addition to the effects on the SAM layer, there are shifts for the O 1[ital s] and oxidized-Si[sub 2[ital p]] binding energies due to the electron beam exposure. Studies on SiO[sub 2] films formed in a wide variety of ways, without the SAM, show similar effects. These shifts are attributed to changes in potential at the Si--SiO[sub 2] interface.
- DOE Contract Number:
- AC06-76RL01830
- OSTI ID:
- 7276439
- Journal Information:
- Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States), Vol. 12:4; ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ORGANIC CHLORINE COMPOUNDS
PHYSICAL RADIATION EFFECTS
SILICON
INTERFACES
SILICON OXIDES
BINDING ENERGY
ELECTRON BEAMS
ELECTRONIC STRUCTURE
KEV RANGE 01-10
PHOTOELECTRON SPECTROSCOPY
BEAMS
CHALCOGENIDES
ELECTRON SPECTROSCOPY
ELEMENTS
ENERGY
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ORGANIC HALOGEN COMPOUNDS
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OXYGEN COMPOUNDS
PARTICLE BEAMS
RADIATION EFFECTS
SEMIMETALS
SILICON COMPOUNDS
SPECTROSCOPY
360605* - Materials- Radiation Effects