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Relationships between the band gaps of the zinc-blende and wurtzite modifications of semiconductors

Journal Article · · Physical Review, B: Condensed Matter; (United States)
; ;  [1]
  1. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
While the direct band gaps of wurtzite (W) and zinc-blende (ZB) structures are rather similar, the W and ZB gaps can differ enormously (e.g., [similar to]1 eV in SiC) in indirect gap materials. This large difference is surprising given that the structural difference between wurtzite and zinc blende starts only in the third neighbor and that [ital total] energy differences are only [similar to]0.01 eV/atom. We show that zinc-blende compounds can be divided into five types (I--V) in terms of the order of their [Gamma][sub 1[ital c]], [ital X][sub 1[ital c]], and [ital L][sub 1[ital c]] levels and that this decides the character (direct, indirect, pseudodirect) of the wurtzite band gap. The observation of small [ital E][sub [ital g]][sup W][minus][ital E][sub [ital g]][sup ZB] differences in direct band-gap systems ( type II,'' e.g., ZnS), and large differences in indirect gap systems ( type IV,'' e.g., SiC) are explained. We further show that while both type-III systems (e.g., AIN) and type-V systems (e.g., GaP) have an indirect gap in the zinc-blende form, their wurtzite form will have direct and pseudodirect band gaps, respectively. Furthermore, a direct-to-pseudodirect transition is predicted to occur in type-I (e.g., GaSb) systems.
DOE Contract Number:
AC36-83CH10093
OSTI ID:
7276406
Journal Information:
Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 50:4; ISSN PRBMDO; ISSN 0163-1829
Country of Publication:
United States
Language:
English