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Confined-to-propagating transition of LO phonons in GaAs/Al sub x Ga sub 1 minus x As superlattices observed by picosecond Raman scattering

Journal Article · · Physical Review Letters; (United States)
; ; ; ;  [1];  [2]
  1. Center for Laser Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078 (United States)
  2. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

We report the first observation of a confined-to-propagating transition of LO phonons in GaAs/Al{sub {ital x}}Ga{sub 1{minus}{ital x}}As superlattices (SL's). Picosecond Raman scattering was used to investigate the generation rate of nonequilibrium GaAs LO phonons in two series of GaAs/Al{sub {ital x}}Ga{sub 1{minus}{ital x}}As SL's with constant GaAs layer widths ({ital L}{sub {ital z}}) and {ital x}, while the Al{sub {ital x}}Ga{sub 1{minus}{ital x}}As layer widths ({ital L}{sub {ital b}}'s) varied. In both series we have observed a sudden increase in the generation rate of the Raman-active hot phonons as {ital L}{sub {ital b}} decreased over a narrow range. We demonstrate that this abrupt increase is due to the sharp transition from the so-called confined to propagating LO phonons. From our results we have determined the GaAs/LO phonon penetration depth into the Al{sub {ital x}}Ga{sub 1{minus}{ital x}}As layers.

DOE Contract Number:
AC04-76DP00789
OSTI ID:
7272202
Journal Information:
Physical Review Letters; (United States), Journal Name: Physical Review Letters; (United States) Vol. 68:7; ISSN PRLTA; ISSN 0031-9007
Country of Publication:
United States
Language:
English