Confined-to-propagating transition of LO phonons in GaAs/Al sub x Ga sub 1 minus x As superlattices observed by picosecond Raman scattering
- Center for Laser Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078 (United States)
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
We report the first observation of a confined-to-propagating transition of LO phonons in GaAs/Al{sub {ital x}}Ga{sub 1{minus}{ital x}}As superlattices (SL's). Picosecond Raman scattering was used to investigate the generation rate of nonequilibrium GaAs LO phonons in two series of GaAs/Al{sub {ital x}}Ga{sub 1{minus}{ital x}}As SL's with constant GaAs layer widths ({ital L}{sub {ital z}}) and {ital x}, while the Al{sub {ital x}}Ga{sub 1{minus}{ital x}}As layer widths ({ital L}{sub {ital b}}'s) varied. In both series we have observed a sudden increase in the generation rate of the Raman-active hot phonons as {ital L}{sub {ital b}} decreased over a narrow range. We demonstrate that this abrupt increase is due to the sharp transition from the so-called confined to propagating LO phonons. From our results we have determined the GaAs/LO phonon penetration depth into the Al{sub {ital x}}Ga{sub 1{minus}{ital x}}As layers.
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 7272202
- Journal Information:
- Physical Review Letters; (United States), Journal Name: Physical Review Letters; (United States) Vol. 68:7; ISSN PRLTA; ISSN 0031-9007
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360606* -- Other Materials-- Physical Properties-- (1992-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CONFINEMENT
DIMENSIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
IRRADIATION
LASER SPECTROSCOPY
PHONONS
PNICTIDES
PULSED IRRADIATION
QUASI PARTICLES
RAMAN SPECTROSCOPY
SPECTROSCOPY
SUPERLATTICES
THICKNESS
WAVE PROPAGATION