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Photoelectron spectroscopy of SiH/sub 3//sup -/ and SiD/sub 3//sup -/

Journal Article · · J. Am. Chem. Soc.; (United States)
DOI:https://doi.org/10.1021/ja00281a013· OSTI ID:7252276

The authors have measured the photoelectron spectra of SiH/sub 3//sup -/ and SiD/sub 3//sup -/ and report the following electron affinities: EA(SiH/sub 3/) = 1.406 +/- 0.014 eV, EA(SiD/sub 3/) = 1.386 +/- 0.022 eV. From an analysis of the peak splittings and intensities, we extract potential energy curves for the umbrella mode of the SiH/sub 3//sup -/ negative ion and the SiH/sub 3/ radical. Both species are pyramidal molecules with inversion barriers of 9000 +/- 2000 cm/sup -1/ for SiH/sub 3//sup -/ and 1900 +/- 300 cm/sup -1/ for SiH/sub 3/. The bond angle ..cap alpha..(H-Si-H) for SiH/sub 3//sup -/ is found to be 94.5/sup 0/ while the value for the radical, SiH/sub 3/, is 112.5/sup 0/. Using the gas-phase acidity of SiH/sub 4/, we obtain the following bond dissociation energy for silane: DH/sup 0//sub 298/ (H/sub 3/Si-H) = 90.3 +/- 2.4 kcal/mol.

Research Organization:
Univ. of Colorado, Boulder
DOE Contract Number:
AC02-80ER10722
OSTI ID:
7252276
Journal Information:
J. Am. Chem. Soc.; (United States), Journal Name: J. Am. Chem. Soc.; (United States) Vol. 108:21; ISSN JACSA
Country of Publication:
United States
Language:
English