Energy resolution of semiconductor detectors with alternating bias
A method of recording nuclear radiation is discussed. This method is based on the interaction of nonequilibrium electron-hole pairs, excited by an ionizing particle, with an alternating electric field. When the bias field frequency exceeds the reciprocal dielectric relaxation time of a semiconductor containing Shockley--Read-type recombination centers, an analytical relation is obtained between the energy resolution of the detector, the electrical parameters of the sample material, and the parameters of the nonequilibrium conductivity recording equipment. A determination is reported of the nature of the noise which limits the energy resolution for given amounts of the dopant, carrier lifetimes, and device parameters. Conditions for the attainment of the limiting energy resolution are derived. A comparison of detectors with alternating and static bias reveals a marked difference between the resultant forms of the amplitude spectra. (AIP)
- Research Organization:
- V. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk
- OSTI ID:
- 7248717
- Journal Information:
- Sov. Phys. - Semicond. (Engl. Transl.); (United States), Vol. 10:7
- Country of Publication:
- United States
- Language:
- English
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