Large area Czochralski silicon. Quarterly report No. 2
A detailed thermal model to predict Czochralski growth rates has been used to investigate effects of various puller parameters on pull rates. The growth rate appears to be fairly insensitive to variables such as interior ambient temperature, ambient environment, and crucible dimensions. The maximum pull rate for semicontinuous growth is around 18 cm/h and for single charge runs, a 15 cm/h average is indicated. Experimental results with multiblade slurry sawing Czochralski crystals are encouraging. Two different runs sawing three 5-cm crystals simultaneously have indicated that multiple crystals can be sawed at the same rate as a single crystal. Boron carbide abrasive slurry has produced cutting rates approximately 2.5 times those of silicon carbide. A 7.6-cm crystal has been sawed using boron carbide abrasive at a production rate of approximately 40 slices/h which is considerably higher than that of conventional ID sawing of semiconductor quality slices. An updated economic model of the Czochralski wafering process utilizing current crystal growth and sawing results still indicates a wafer cost in the $30 to 36/m/sup 2/ range. The sheet cost of finished solar cells fabricated from this material would be less than $0.30/W.
- Research Organization:
- Texas Instruments, Inc., Dallas, TX (United States)
- DOE Contract Number:
- NAS-7-100-954475
- OSTI ID:
- 7247152
- Report Number(s):
- ERDA/JPL/954475-76/2
- Country of Publication:
- United States
- Language:
- English
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