On the homogeneous chemistry of the thermal decomposition of methyltrichlorosilane: Thermodynamic analysis and kinetic modeling

Journal Article · Wed Jun 01 00:00:00 EDT 1994 · Journal of the Electrochemical Society; (United States)

DOI:https://doi.org/10.1149/1.2054969· OSTI ID:7246756

Papasouliotis, G D; Sotirchos, S V ^[1]

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1. Univ. of Rochester, NY (United States). Dept. of Chemical Engineering

Equilibrium gas-phase calculations for the Si/C/Cl/H deposition system are performed over the range of conditions used to deposit silicon carbide (SiC) through the thermal decomposition of methyltrichlorosilane (MTS). The compounds that exist in significant quantities in the gas phase, and thus may influence significantly the chemistry of the process, as well as the main deposition precursors are identified. The effect of temperature, pressure, and initial composition of the reacting mixture on the equilibrium composition of the gas phase is determined, and process conditions that may lead to stoichiometric silicon carbide films are suggested. Based on the results of the equilibrium calculations, a kinetic model for the homogeneous chemistry of the decomposition of MTS is proposed. Several reaction sequences leading to the generation of carbon and silicon deposition precursors are considered and their effects on the chemistry of the system are examined. Finally, the mechanism is incorporated into the reaction and transport model of a plug flow hot-wall reactor and the overall model is used to obtain the spatial variation of the composition of the gas phase under conditions typically encountered in chemical vapor deposition reactors.

• OSTI ID: 7246756
• Journal Information: Journal of the Electrochemical Society; (United States), Journal Name: Journal of the Electrochemical Society; (United States) Vol. 141:6; ISSN JESOAN; ISSN 0013-4651
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400201* -- Chemical & Physicochemical Properties
CARBIDES
CARBON COMPOUNDS
CHEMICAL COATING
CHEMICAL REACTION KINETICS
CHEMICAL REACTIONS
CHEMICAL REACTORS
CHEMICAL VAPOR DEPOSITION
CHLORIDES
CHLORINE COMPOUNDS
DECOMPOSITION
DEPOSITION
HALIDES
HALOGEN COMPOUNDS
HYDRIDES
HYDROGEN COMPOUNDS
KINETICS
MATHEMATICAL MODELS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
REACTION KINETICS
SILANES
SILICON CARBIDES
SILICON CHLORIDES
SILICON COMPOUNDS
SILICON HALIDES
SURFACE COATING
THERMODYNAMICS