Formation of silicon tips with lt 1 nm radius

Journal Article · Mon Jan 15 00:00:00 EST 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.102841· OSTI ID:7246711

Marcus, R B; Ravi, T S; Gmitter, T ^[1]; Chin, K ^[2]; Liu, D ^[3]; Orvis, W J; Ciarlo, D R ^[4]; Hunt, C E; Trujillo, J ^[5]

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1. Bellcore, 331 Newman Springs Road, Red Bank, New Jersey 07701 (USA)
2. Department of Physics, New Jersey Institute of Technology, Newark, New Jersey 07102 (USA)
3. Department of Electrical Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102 (USA)
4. Lawrence Livermore National Laboratory, P. O. Box 5504, L-156, Livermore, California 94550 (USA)
5. Electrical Engineering and Computer Science Department, University of California, Davis, California 95616 (USA)

Electron emitters in vacuum microelectronic devices need sharp tips in order to permit electron emission at moderate voltages. A method has been found for preparing uniform silicon tips with a radius of curvature less than 1 nm. These tips are formed by oxidation of 5-{mu}m-high silicon cones through exploitation of a known oxidation inhibition of silicon at regions of high curvature.

• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 7246711
• Journal Information: Applied Physics Letters; (USA), Vol. 56:3; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
CATHODES
FABRICATION
ELECTRON TUBES
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FIELD EMISSION
OXIDATION
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ELEMENTS
EMISSION
SEMIMETALS
360604* - Materials- Corrosion
Erosion
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426000 - Engineering- Components
Electron Devices & Circuits- (1990-)