Monolithic hybrid mode-locked 1. 3. mu. m semiconductor lasers

Journal Article · Sun Jan 07 23:00:00 EST 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103046· OSTI ID:7245484

Morton, P A; Bowers, J E ^[1]; Koszi, L A; Soler, M; Lopata, J; Wilt, D P ^[2]

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1. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (USA)
2. AT T Bell Laboratories, Murray Hill, New Jersey 07974 (USA)

We describe the first results of hybrid mode locking combining both active and passive mode locking of a semiconductor laser. These functions are integrated into a monolithic device with a 1.3 {mu}m GaInAsP gain region, an active waveguide, and a saturable absorber. The devices have low threshold currents, and exhibit hysteresis in their light/current characteristics. The long integrated waveguides allow mode locking at a repetition rate of 15 GHz without the need for an external cavity. Pulse widths as short as 1.4 ps have been demonstrated using the combined effects of active and passive mode locking.

• OSTI ID: 7245484
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:2; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HYSTERESIS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
INFRARED RADIATION
LASER CAVITIES
LASERS
MODE LOCKING
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
THRESHOLD CURRENT
WAVEGUIDES