Elimination of artifacts in interline charge-coupled device imagers

Journal Article · Tue Oct 01 04:00:00 EDT 1991 · Optical Engineering; (United States)

DOI:https://doi.org/10.1117/12.55959· OSTI ID:7236868

Turko, B T ^[1]; Yates, G J ^[2]

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1. Lawrence Berkeley Lab., Univ. of California, Engineering Div., Berkeley, CA (US)
2. Los Alamos National Lab., Los Alamos, NM (US)

Charge-coupled devices (CCDs) of interline transfer design are especially useful in imaging a high frame rates. However, this paper reports that their sensitivity to ionization radiation and the reduced effective opacity of vertical charge transfer registers cause undesired image artifacts. Random white spots from the radiation and ghost images (or smear) generated in the registers may severely impair the image quality. An electronic method of eliminating these artifacts is described. Special sequences of pulses clock the CCD, quickly dumping the unwanted charge. The fast readout of images, cleared of artifacts, follows immediately. Results obtained with the Fairchild Weston CCD 222 imager are shown.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 7236868
• Journal Information: Optical Engineering; (United States), Journal Name: Optical Engineering; (United States) Vol. 30:10; ISSN OPEGA; ISSN 0091-3286
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
440600 -- Optical Instrumentation-- (1990-)
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
47 OTHER INSTRUMENTATION
CHARGE EXCHANGE
CHARGE-COUPLED DEVICES
DESIGN
ELECTRONIC CIRCUITS
FLUCTUATIONS
IMAGE PROCESSING
IMAGES
INHIBITION
OPACITY
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PROCESSING
PULSES
RADIATION EFFECTS
READOUT SYSTEMS
SEMICONDUCTOR DEVICES
SENSITIVITY
VARIATIONS