skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Structure and electrical properties of CdS and CdTe thick films for solar cell applications

Conference · · J. Vac. Sci. Technol.; (United States)
OSTI ID:7235700

Low cost solar cells based on CdTe/CdS heterojunction devices are discussed and their production studied using a single crystal CdS substrate mounted close to a CdTe source in a closed temperature controlled block. The CdTe had been doped with Au or P and was p-type and its film growth rate was 100 ..mu..m/H at a source temperature of 680/sup 0/C in H/sub 2/ with the substrate support at 480/sup 0/C oriented CdTe grains formed of 15 to 25 ..mu..m diam. with their 111 axis parallel to the c-axis of the CdS, CdTe-films grown on fused sapphire and silica had random grain orientation with grain size of 5 ..mu..m. The epitaxial films on CdS had a resistivity of 15 to 440 ..cap omega.. cm, whereas those on glasslike bases had a value of 10/sup 5/ ..cap omega.. cm. Films were also grown from an In-doped CdS source in H/sub 2/ at atmospheric pressure using silica substrates. They had grain sizes of 1 to 3 ..mu..m with resistivities of 10/sup 3/ ..cap omega.. cm. It is concluded that lateral electrical resistivity is determined mainly by grain size and epitaxy and large grain size is needed in solar cells.

OSTI ID:
7235700
Journal Information:
J. Vac. Sci. Technol.; (United States), Vol. 12:4; Conference: 2. conference on structure/property relationships in thick films and bulk coatings, San Francisco, CA (USA), 10 Feb 1975
Country of Publication:
United States
Language:
English