Diffusional crack growth and creep rupture of silicon carbide doped with alumina

Journal Article · Tue Mar 01 04:00:00 EST 1994 · Journal of the American Ceramic Society; (United States)

DOI:https://doi.org/10.1111/j.1151-2916.1994.tb05348.x· OSTI ID:7233558

Ohji, Tatsuki; Yamauchi, Yukihiko ^[1]

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1. National Industrial Research Inst., Nagoya (Japan)

This study with tensile creep and crack growth behavior of silicon carbide doped with alumina at 1,400 C. Excellent creep resistance was observed for stresses from 150 MPa to 200 MPa. From the creep exponent of 1.4 and the activation energy of 320 kJ/mol, the principal creep mechanism was Coble creep. The creep failure was caused by slow crack growth from a preexisting flaw. The crack was found to grow subcritically along grain boundaries almost in isolation. The relation between the time-to-failure and the applied stress was well treated by a diffusive crack growth model, and the threshold stress of this material at 1,400 C was estimated at 165 MPa.

• OSTI ID: 7233558
• Journal Information: Journal of the American Ceramic Society; (United States), Journal Name: Journal of the American Ceramic Society; (United States) Vol. 77:3; ISSN 0002-7820; ISSN JACTAW
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360203* -- Ceramics
Cermets
& Refractories-- Mechanical Properties
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
CARBIDES
CARBON COMPOUNDS
CHALCOGENIDES
CRACK PROPAGATION
CREEP
MECHANICAL PROPERTIES
OXIDES
OXYGEN COMPOUNDS
SILICON CARBIDES
SILICON COMPOUNDS
TENSILE PROPERTIES