The effect of hydrostatic pressure on II-VI strained layer heterostructures

Miscellaneous · Wed Jan 01 00:00:00 EST 1992

OSTI ID:7233090

Tuchman, J A

The application of hydrostatic pressure may be used as a tool for studying mismatch strains in semiconductor heterostructures. It is shown that the mismatch strain in strained layer heterostructures will generally decrease with the initial application of hydrostatic pressure. However, strain-free conditions under pressure may only occur in heterostructures composed of semiconductors from different series. Such a crossover through a strain-free condition is observed in a ZnSe epilayer grown commensurately to a GaAs substrate by monitoring light and heavy hole exciton photoluminescence under hydrostatic pressure. Strain, quantum confinement and band alignment in II-VI strained layer superlattices (SLS) are of special interest to determine their potential use as active materials in optical devices involving visible light emission. One such class of structures are ZnSe/ZnMnSe strained layer superlattices, which have band gaps in the blue. The application of hydrostatic pressure is used to probe electronic structure and strain within these systems by using photoluminescence.

• Research Organization: Columbia Univ., New York, NY (United States)
• OSTI ID: 7233090
• Resource Relation: Other Information: Thesis (Ph.D.)
• Country of Publication: United States
• Language: English

Related Subjects

74 ATOMIC AND MOLECULAR PHYSICS
HETEROJUNCTIONS
BAND THEORY
ELECTRONIC STRUCTURE
STRAINS
GALLIUM ARSENIDES
HYDROSTATICS
MANGANESE SELENIDES
SUPERLATTICES
ZINC SELENIDES
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
GALLIUM COMPOUNDS
JUNCTIONS
MANGANESE COMPOUNDS
PNICTIDES
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR JUNCTIONS
TRANSITION ELEMENT COMPOUNDS
ZINC COMPOUNDS
664100* - Theory of Electronic Structure of Atoms & Molecules- (1992-)