Growth of Oriented C11(b) MoSi(2) Bicrystals Using a Modified Czochralski Technique
- Sandia National Laboratories
Oriented bicrystals of pure C11b MoSi2 have been grown in a tri-arc furnace using the Czochralski technique. Two single crystal seeds were used to initiate the growth. Each seed had the orientation intended for one of the grains of the bicrystals, which resulted in a 60° twist boundary on the (110) plane. Seeds were attached to a water-cooled seed rod, which was pulled at 120 mm/h with the seed rod rotating at 45 rpm. The water- cooled copper hearth was counter-rotated at 160 rpm. Asymmetric growth ridges associated with each seed crystal were observed during growth and confirmed the existence of a bicrystal. It was also found that careful alignment of the seeds was needed to keep the grain boundary from growing out of the boule. The resulting boundary was characterized by imaging and crystallographic techniques in a scanning electron microscope. The boundary was found to be fairly sharp and the misorientation between the grains remained within 2° from the disorientation between the seeds.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 7227
- Report Number(s):
- SAND99-1381J; ON: DE00007227
- Journal Information:
- (505)845-8220, Journal Name: (505)845-8220
- Country of Publication:
- United States
- Language:
- English
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