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Metal-ion catalyzed oxidation of a G-agent simulant by oxone. Final report Oct 89-Dec 90

Technical Report ·
OSTI ID:7225748
By means of the ability of oxone to oxidize sulphur, oxone has been shown to be a rapid decontaminant for mustard or VX. G-agents, such as sarin or soman, are difficult to oxidize, and all means to decontaminate sarin or soman are based on hydrolysis. To see if oxone might have utility as a general decontaminant, experiments were run to see if the ability of oxone to destroy organophosphorus esters could be enhanced with transition-metal catalysts. Hydrolysis of the G-agent simulant diisopropyl methylphosphonate (DIMP) was promoted in oxone solution by the presence of such low valent metal ions as cobalt (II), chromium (III), or manganese (II). The reaction is initiated by radical formation from decomposition of HO-SO3. Radical chains may be terminated by dimerization of S04-, other reactions forming 02, or by reduction of the radical to S04= by low valent metal ion. The radical can also reduce the oxidized metal ion back to the original low valent state, thereby providing a path for turnover of the metal ion. The relatively slow rate and the potential for contaminants in field application that could react with the SO4- radicals make it unlikely that metal ion catalysis of oxone decomposition will prove to be a useful decontaminant. Decontamination, NMR, Chemical agents, Metal-ion catalysis, Chromium (III), DIMP, Oxone, Kinetics. This paper describes the effect of a crystal field, according to site symmetry, upon the magnetic quantum-level structure of an atomic ion, as expressed in electric dipole transitions (a corresponding treatment for magnetic dipole transitions, in the original German, is not included). Crystal field Magnetic quantum numbers Atomic ion.
Research Organization:
Chemical Research, Development and Engineering Center, Aberdeen Proving Ground, MD (United States)
OSTI ID:
7225748
Report Number(s):
AD-A-254351/0/XAB; CRDEC-TR--374
Country of Publication:
United States
Language:
English