Superconductivity in ultrathin Pb films deposited on silicon

Journal Article · Sun May 01 00:00:00 EDT 1977 · Phys. Rev., B; (United States)

DOI:https://doi.org/10.1103/PhysRevB.15.4180· OSTI ID:7223271

Miller, D L

Superconducting Pb films 11 to 200 A thick have been deposited in ultrahigh vacuum on the clean (111) surface of crystalline silicon. Low-energy-electron diffraction indicated that the Pb preferentially grows with the Pb (111) plane parallel to the substrate surface. Measurements of normal-state film resistivity and of the superconducting transition temperature T/sub c/ were taken in situ. The dependence of T/sub c/ on film thickness was essentially identical to that previously measured for Pb films grown epitaxially on crystalline PbTe. This result is discussed in view of the dissimilarities between the two substrate materials.

• Research Organization: Brookhaven National Laboratory, Upton, New York 11973
• OSTI ID: 7223271
• Journal Information: Phys. Rev., B; (United States), Journal Name: Phys. Rev., B; (United States) Vol. 15:9; ISSN PLRBA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360104* -- Metals & Alloys-- Physical Properties
656102 -- Solid State Physics-- Superconductivity-- Acoustic
Electronic
Magnetic
Optical
& Thermal Phenomena-- (-1987)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BOUNDARY CONDITIONS
COHERENT SCATTERING
DIFFRACTION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON DIFFRACTION
ELEMENTS
FILMS
LEAD
METALS
PHYSICAL PROPERTIES
SCATTERING
SUPERCONDUCTING FILMS
SUPERCONDUCTIVITY
THERMODYNAMIC PROPERTIES
TRANSITION TEMPERATURE