Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Electronic structure of the high-T/sub c/ superconductor Ba/sub 1-//sub x/K/sub x/BiO/sub 3/

Journal Article · · Phys. Rev. Lett.; (United States)
Band-structure results for ordered Ba/sub 0.5/K/sub 0.5/BiO/sub 3/ alloys confirm that the antibonding Bi(6s)-O(2p) conduction band near E/sub F/ in cubic BaBiO/sub 3/ is minimally affected by substitutional K doping at the A (Ba) site. This supports the prediction that A-site doping would extend the metallic range of Ba/sub 1-//sub x/K/sub x/BiO/sub 3/ closer to half filling (BaBiO/sub 3/) than B-site doping (BaPb/sub 1-//sub y/Bi/sub y/O/sub 3/), thereby increasing the coupling of the conduction electrons to bond-stretching O phonons and T/sub c/. Ba/sub 1-//sub x/T/sub x/PbO/sub 3/, where T is trivalent, might also exhibit favorable superconducting properties.
Research Organization:
ATandT Bell Laboratories, Murray Hill, New Jersey 07974
OSTI ID:
7201660
Journal Information:
Phys. Rev. Lett.; (United States), Journal Name: Phys. Rev. Lett.; (United States) Vol. 60:25; ISSN PRLTA
Country of Publication:
United States
Language:
English