Proton damage effects in an EEV CCD imager

Conference · Fri Dec 01 00:00:00 EST 1989 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)

OSTI ID:7198795

Hopkinson, G R ^[1]; Chlebek, C ^[2]

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1. Sira Ltd., Chislehurst, Kent BR7 5EH, (GB)
2. DLR, PT-TN4, Postfach 90 60 58, 5000 Koln 90 (DE)

An EEV three phase CCD has been irradiated by 40 MeV protons up to a fluence of 3 {times} 10{sup 8} p/cm{sup 2}. New dark charge spikes appeared, but these were smaller than those previously reported for virtual phase CCDs. Dark charge maps were obtained at several temperatures. The larger spikes showed erratic temperature behavior, the smaller ones decreased in size as the temperatures decreased but at a rate slower than the mean dark charge level. Possible mechanisms are discussed

• OSTI ID: 7198795
• Report Number(s): CONF-890723-; CODEN: IETNA; TRN: 90-014146
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Vol. 36:6; Conference: 26. annual conference on nuclear and space radiation effects, Marco Island, FL (USA), 25-29 Jul 1989; ISSN 0018-9499
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CHARGE-COUPLED DEVICES
IRRADIATION
IMAGE SCANNERS
RADIATION HARDENING
MEV RANGE 10-100
PROTONS
BARYONS
ELEMENTARY PARTICLES
ENERGY RANGE
FERMIONS
HADRONS
HARDENING
MEV RANGE
NUCLEONS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems
440100 - Radiation Instrumentation