Epitaxial growth of Fe-doped sapphire thin films from amorphous Al oxide layers deposited on sapphire substrates
- Materials Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
Thin films of amorphous Al[sub 2]O[sub 3], about 280 nm thick, with Fe-cation concentrations of 0--4 at. % were deposited onto alpha-alumina [0001] substrates. Epitaxial regrowth of the thin films was found to occur during a postannealing process at temperatures of 950 and 1400 [degree]C. The regrowth quality was determined by Rutherford backscattering spectrometry and ion channeling measurements. Perfect regrowth was found in the undoped samples after annealing at 1400 [degree]C with a minimum backscattering yield of 2% in the Al sublattice. Furthermore, ion channeling angular scans revealed that Fe dopants occupied the substitutional sites of Al sublattice upon thermal anneal. This simple method of incorporating dopants into single-crystal alumina has potential in the fabrications of thin-film planar optical waveguides.
- OSTI ID:
- 7198502
- Journal Information:
- Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 65:2; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
ALLOYS
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
ANNEALING
CHALCOGENIDES
CHANNELING
CORUNDUM
EPITAXY
FILMS
HEAT TREATMENTS
ION CHANNELING
IRON ADDITIONS
IRON ALLOYS
MINERALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
SAPPHIRE
THIN FILMS