Latent failures due to electrostatic discharge in CMOS integrated circuits
Conference
·
OSTI ID:7194241
Electrostatic discharge (ISD) caused two CMOS integrated circuits (ICs) to fail in a latent manner due to gate oxide rupture. One failure occurred during an experiment designed to test for latent failures where a set of ICs was subjected to simulated electrostatic discharge (VZAP) followed by life testing. Another failure occurred during the operation of a system being readied for a satellite application.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 7194241
- Report Number(s):
- SAND-86-1228; CONF-8609149-2; ON: DE87005507
- Country of Publication:
- United States
- Language:
- English
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